Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...

Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs

Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs, with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be-As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the...

Analysis of Photoluminescence for N-doped and undoped p-type ZnO Thin Films Fabricated by RF Magnetron Sputtering Method

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at 800 C for 5 minutes in ambient of O2 with pressure of 10 Torr. X-ray diffraction shows that the homobuffer layer is beneficial to the crystalline of N-doped ZnO thi...

Positron-annihilation study of compensation defects in InP

Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level

The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2X 1017, 4.5X 1017, and 1.5X 1018 cme3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microsc...